onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06TU FQU20N06TU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039988-FQU20N06TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 16.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 590pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 63 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039988-FQU20N06TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 16.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 590pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 63 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06TU - 1039988-FQU20N06TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06TU
1039988-FQU20N06TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06TU 1039988-FQU20N06TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039988-FQU20N06TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 16.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 590pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 63 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039988-FQU20N06TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 16.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 590pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 63 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU20N06TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQU20N06TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQU20N06TU
MOSFET N-CH 60V 16.8A IPAK

MOSFET N-CH 60V 16.8A IPAK

Supplier's Site
MOSFET N-CH 60V 16.8A IPAK - 598-FQU20N06TU - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 16.8A IPAK
598-FQU20N06TU
MOSFET N-CH 60V 16.8A IPAK 598-FQU20N06TU
MOSFET N-CH 60V 16.8A IPAK

MOSFET N-CH 60V 16.8A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039988-FQU20N06TU FQU20N06TU 598-FQU20N06TU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06TU Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 60V 16.8A IPAK
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 2500 to 38000 milliwatts 2500 milliwatts
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