N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039986-FQU1N80TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 7.2nC @ 10V
Max Input Capacitance: 195pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 20 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5,040
MOSFET N-CH 800V 1A IPAK
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQU1N80TU-ND | 1039986-FQU1N80TU | FQU1N80TU | FQU1N80TU |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU1N80TU | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; I-Pak | TO-251-3 Short Leads, IPak, TO-251AA | |
| V(BR)DSS | 800 volts |
