onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU1N80TU FQU1N80TU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039986-FQU1N80TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 7.2nC @ 10V
Max Input Capacitance: 195pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 20 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5,040

MOSFETs 800V Single Product overview: FQU1N80TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQU1N80TU can be used for catalog matching and distributor lookup.

N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK