Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001264-FQU1N60CTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 6.2nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 5,040
N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
MOSFET N-CH 600V 1A IPAK
MOSFET 600V N-Channel Adv Q-FET C-Series
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001264-FQU1N60CTU | FQU1N60CTUFS-ND | FQU1N60CTU | FQU1N60CTU |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU1N60CTU | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | |||
| PD | 2500 to 28000 milliwatts |
