onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU1N50TU FQU1N50TU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039983-FQU1N50TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 1.1A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 5.5nC @ 10V
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 9 Ohm @ 550mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

MOSFET N-CH 500V 1.1A IPAK Product overview: FQU1N50TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 1.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU1N50TU can be used for catalog matching and distributor lookup.