P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET P-CH 60V 12A IPAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067480-FQU17P06TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 900pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 135 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040
MOSFETs -60V Single Product overview: FQU17P06TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQU17P06TU can be used for catalog matching and distributor lookup.
MOSFET P-CH 60V 12A IPAK
P CHANNEL MOSFET, -60V, 12A, IPAK; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; On Resistance Rds(on):0.135ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
MOSFET, P CHANNEL, -60V, -12A, TO-251; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQU17P06TU-ND | FQU17P06TU | 067480-FQU17P06TU | 2088-FQU17P06TU | FQU17P06TU | FQU17P06TU | 58K1531 | 23M6300 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU17P06TU | -60V MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -60V, 12A, Ipak; Transistor Polarity Onsemi | Mosfet, P Channel, -60V, -12A, To-251; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | SOT3; I-Pak | Tube | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 12000 milliamps | 12000 milliamps | 12000 milliamps |
