Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039981-FQU13N06LTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6.4nC @ 5V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 115 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5,040
N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
N-Channel MOSFET, 60V, 11A, 115mR, Logic Level, TO-251 Product overview: FQU13N06LTU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU13N06LTU can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 11A IPAK
MOSFET N-CH 60V 11A IPAK
MOSFET N-CH 60V 11A IPAK
MOSFET 60V N-Channel QFET Logic Level
MOSFET, N CH, 60V, 11A, TO-251AA-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1039981-FQU13N06LTU | FQU13N06LTU-ND | 278-FQU13N06LTU | FQU13N06LTU | 598-FQU13N06LTU | FQU13N06LTU | FQU13N06LTU | 31Y1567 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU13N06LTU | Single FETs, MOSFETs | N-Channel 60V 11A MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CH 60V 11A IPAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Ch, 60V, 11A, To-251Aa-3; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 2500 to 28000 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; I-Pak | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 |
