onsemi Single FETs, MOSFETs FQU12N20TU

N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK

N-Channel MOSFET 200V 9A 280mR TO-251 Product overview: FQU12N20TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU12N20TU can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175521-FQU12N20TU
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Family Name: FQU12N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: I-Pak
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 910pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 2.5W (Ta), 55W (Tc)
Rds On (Maximum) @ Id, Vgs: 280 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): STD7NS20-1; STD7NS20-1T4; IRFU13N20D;
Introduction Date: April 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040