onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU10N20TU FQU10N20TU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039978-FQU10N20TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 7.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 3.8A, 10V Alternative Parts (Cross-Reference): IRFU9N20DPBF; STD7NS20-1; FQU10N20TU; FQU10N20CTU_NL; Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039978-FQU10N20TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 7.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 3.8A, 10V Alternative Parts (Cross-Reference): IRFU9N20DPBF; STD7NS20-1; FQU10N20TU; FQU10N20CTU_NL; Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU10N20TU - 1039978-FQU10N20TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU10N20TU
1039978-FQU10N20TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU10N20TU 1039978-FQU10N20TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039978-FQU10N20TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 7.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 3.8A, 10V Alternative Parts (Cross-Reference): IRFU9N20DPBF; STD7NS20-1; FQU10N20TU; FQU10N20CTU_NL; Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039978-FQU10N20TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 7.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 3.8A, 10V
Alternative Parts (Cross-Reference): IRFU9N20DPBF; STD7NS20-1; FQU10N20TU; FQU10N20CTU_NL;
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
200V 7.6A MOSFET Transistor
278-FQU10N20TU
200V 7.6A MOSFET Transistor 278-FQU10N20TU
MOSFET N-CH 200V 7.6A IPAK Product overview: FQU10N20TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 7.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU10N20TU can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 7.6A IPAK Product overview: FQU10N20TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 7.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU10N20TU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU10N20TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQU10N20TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQU10N20TU
MOSFET N-CH 200V 7.6A IPAK

MOSFET N-CH 200V 7.6A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039978-FQU10N20TU 278-FQU10N20TU FQU10N20TU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU10N20TU 200V 7.6A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 2500 to 51000 milliwatts 2500 milliwatts
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