onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT7N10TF FQT7N10TF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039976-FQT7N10TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Tc) Family Name: FQT7N10 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 7.5nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 350 mOhm @ 850mA, 10V Alternative Parts (Cross-Reference): STN2NF10; 2SK1299L-E ; 2SK1299L; FQT7N10; Introduction Date: May 21, 2001 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient Quantity per package: 4k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039976-FQT7N10TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Tc) Family Name: FQT7N10 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 7.5nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 350 mOhm @ 850mA, 10V Alternative Parts (Cross-Reference): STN2NF10; 2SK1299L-E ; 2SK1299L; FQT7N10; Introduction Date: May 21, 2001 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient Quantity per package: 4k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT7N10TF - 1039976-FQT7N10TF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT7N10TF
1039976-FQT7N10TF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT7N10TF 1039976-FQT7N10TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039976-FQT7N10TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Tc) Family Name: FQT7N10 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 7.5nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 350 mOhm @ 850mA, 10V Alternative Parts (Cross-Reference): STN2NF10; 2SK1299L-E ; 2SK1299L; FQT7N10; Introduction Date: May 21, 2001 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient Quantity per package: 4k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039976-FQT7N10TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Tc)
Family Name: FQT7N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7.5nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 350 mOhm @ 850mA, 10V
Alternative Parts (Cross-Reference): STN2NF10; 2SK1299L-E ; 2SK1299L; FQT7N10;
Introduction Date: May 21, 2001
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Quantity per package: 4k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQT7N10TFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQT7N10TFTR-ND
Single FETs, MOSFETs FQT7N10TFTR-ND
N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4

N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Single FETs, MOSFETs - FQT7N10TFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQT7N10TFCT-ND
Single FETs, MOSFETs FQT7N10TFCT-ND
N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4

N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Singapore
100V MOSFET Transistor
2088-FQT7N10TF
100V MOSFET Transistor 2088-FQT7N10TF
MOSFETs 100V Single Product overview: FQT7N10TF from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQT7N10TF can be used for catalog matching and distributor lookup.

MOSFETs 100V Single Product overview: FQT7N10TF from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQT7N10TF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 1.7 A, 100 V, 0.28 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 31Y1565 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 1.7 A, 100 V, 0.28 Ohm, 10 V, 4 V Rohs Compliant Onsemi
31Y1565
Mosfet Transistor, N Channel, 1.7 A, 100 V, 0.28 Ohm, 10 V, 4 V Rohs Compliant Onsemi 31Y1565
MOSFET Transistor, N Channel, 1.7 A, 100 V, 0.28 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 1.7 A, 100 V, 0.28 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
N Ch Mosfet, 100V, 1.7A, Sot-223, Full Reel; Channel Type Onsemi - 82C4379 - Newark, An Avnet Company
Chicago, IL, United States
N Ch Mosfet, 100V, 1.7A, Sot-223, Full Reel; Channel Type Onsemi
82C4379
N Ch Mosfet, 100V, 1.7A, Sot-223, Full Reel; Channel Type Onsemi 82C4379
N CH MOSFET, 100V, 1.7A, SOT-223, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CH MOSFET, 100V, 1.7A, SOT-223, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V Single

MOSFET 100V Single

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQT7N10TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQT7N10TF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQT7N10TF
MOSFET N-CH 100V 1.7A SOT223-4

MOSFET N-CH 100V 1.7A SOT223-4

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039976-FQT7N10TF FQT7N10TFTR-ND 2088-FQT7N10TF 31Y1565 82C4379 FQT7N10TF FQT7N10TF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT7N10TF Single FETs, MOSFETs 100V MOSFET Transistor Mosfet Transistor, N Channel, 1.7 A, 100 V, 0.28 Ohm, 10 V, 4 V Rohs Compliant Onsemi N Ch Mosfet, 100V, 1.7A, Sot-223, Full Reel; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 2000 milliwatts 2 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-223-4 SOT223; TO-261-4, TO-261AA Reel TO-3 TO-3; SOT223 TO-261-4, TO-261AA
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