onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT4N20TF FQT4N20TF

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039973-FQT4N20TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 850mA (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6.5nC @ 10V
Max Input Capacitance: 220pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 425mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 200V 0.85A SOT-223 Product overview: FQT4N20TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 0.85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 0.85A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQT4N20TF can be used for catalog matching and distributor lookup.

N-Channel 200V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4