Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039970-FQT2P25TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 550mA (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 8.5nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4 Ohm @ 275mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs
P-Channel MOSFET, -250V, -0.55A, 4Ω, SOT-223, Tape & Reel Product overview: FQT2P25TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -250V, -0.55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -250V, -0.55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQT2P25TF can be used for catalog matching and distributor lookup.
P-Channel 250V 550mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4
MOSFET P-CH 250V 550MA SOT223-4
MOSFET, P-CH, -250V, -0.55A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-550mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):3.15ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes
MOSFET P-CH 250V 550MA SOT223-4
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1039970-FQT2P25TF | 278-FQT2P25TF | FQT2P25TFTR-ND | FQT2P25TF | 07AH4001 | FQT2P25TF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT2P25TF | P-Channel -250V -0.55A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||
| V(BR)DSS | 250 volts | 250 volts | ||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; SOT-223-4 | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | TO-3; SOT223 | TO-261-4, TO-261AA |
