onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT2P25TF FQT2P25TF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039970-FQT2P25TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 550mA (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8.5nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4 Ohm @ 275mA, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT2P25TF - 1039970-FQT2P25TF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQT2P25TF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQT2P25TFTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQT2P25TF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity Onsemi - 07AH4001 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039970-FQT2P25TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 550mA (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8.5nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4 Ohm @ 275mA, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT2P25TF - 1039970-FQT2P25TF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT2P25TF
1039970-FQT2P25TF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT2P25TF 1039970-FQT2P25TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039970-FQT2P25TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 550mA (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8.5nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4 Ohm @ 275mA, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039970-FQT2P25TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 550mA (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 8.5nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4 Ohm @ 275mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQT2P25TF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQT2P25TF
Single FETs, MOSFETs FQT2P25TF
MOSFET P-CH 250V 550MA SOT223-4

MOSFET P-CH 250V 550MA SOT223-4

Supplier's Site Datasheet
Single FETs, MOSFETs - FQT2P25TFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQT2P25TFTR-ND
Single FETs, MOSFETs FQT2P25TFTR-ND
P-Channel 250V 550mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4

P-Channel 250V 550mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQT2P25TF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQT2P25TF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQT2P25TF
MOSFET P-CH 250V 550MA SOT223-4

MOSFET P-CH 250V 550MA SOT223-4

Supplier's Site
Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity Onsemi - 07AH4001 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity Onsemi
07AH4001
Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity Onsemi 07AH4001
MOSFET, P-CH, -250V, -0.55A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-550mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):3.15ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -250V, -0.55A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-550mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):3.15ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039970-FQT2P25TF FQT2P25TF FQT2P25TFTR-ND FQT2P25TF 07AH4001
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT2P25TF Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity Onsemi
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 250 volts 250 volts
PD 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-223-4 SOT223; TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA TO-261-4, TO-261AA TO-3; SOT223
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