N-Channel 60V 2.8A (Tc) 2.1W (Tc) Surface Mount SOT-223-4
MOSFET N-CH 60V 2.8A SOT223-4
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001257-FQT13N06TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7.5nC @ 10V
Max Input Capacitance: 310pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 140 mOhm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs
N-Channel MOSFET, 60V, 2.8A, 140mR, SOT-223 Product overview: FQT13N06TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQT13N06TF can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 2.8A SOT223-4
MOSFET, N CH, 60V, 2.8A, SOT-223-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQT13N06TFFSTR-ND | FQT13N06TF | 001257-FQT13N06TF | 278-FQT13N06TF | FQT13N06TF | FQT13N06TF | 31Y1562 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT13N06TF | N-Channel 60V 2.8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Ch, 60V, 2.8A, Sot-223-3; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223-4 | TO-261-4, TO-261AA | TO-3; SOT223 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts |
