MOSFETs 60V Single Product overview: FQT13N06LTF from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQT13N06LTF can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001256-FQT13N06LTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Tc)
Family Name: FQT13N06L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6.4nC @ 5V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.4A, 10V
Alternative Parts (Cross-Reference): BSP320S L6327XT; ZXMN6A11GFTA; BSP320SL6433HTMA1;
Introduction Date: May 22, 2001
ECCN: EAR99
Country of Origin: Japan, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs
MOSFET N-CH 60V 2.8A SOT223-4
N-Channel 60V 2.8A (Tc) 2.1W (Tc) Surface Mount SOT-223-4
MOSFET N-CH 60V 2.8A SOT223-4
MOSFET, N CH, 60V, 2.8A, SOT-223-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET, N CH, 60V, 2.8A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FQT13N06LTF | 001256-FQT13N06LTF | FQT13N06LTF | FQT13N06LTFTR-ND | FQT13N06LTF | FQT13N06LTF | 31Y1561 | 85AC1807 |
| Product Name | 60V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT13N06LTF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 60V, 2.8A, Sot-223-3; Channel Type Onsemi | Mosfet, N Ch, 60V, 2.8A, Sot-223-3; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0041 kS | |||||||
| PD | 2.1 milliwatts | 2100 milliwatts | 2100 milliwatts | |||||
| Package Type | Reel | SOT3; SOT-223-4 | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | Surface Mount | TO-3; SOT223 | TO-3; SOT223 |
