onsemi FET, MOSFET Arrays FQS4901TF

Description
MOSFET 2N-CH 400V 450MA 8SOIC
Request a Quote Datasheet
Description
MOSFET 2N-CH 400V 450MA 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FQS4901TF - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FQS4901TF
FET, MOSFET Arrays FQS4901TF
MOSFET 2N-CH 400V 450MA 8SOIC

MOSFET 2N-CH 400V 450MA 8SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - FQS4901TFTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FQS4901TFTR-ND
FET, MOSFET Arrays FQS4901TFTR-ND
Mosfet Array 2 N-Channel (Dual) 400V 450mA 2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 400V 450mA 2W Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQS4901TF - 1039967-FQS4901TF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQS4901TF
1039967-FQS4901TF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQS4901TF 1039967-FQS4901TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039967-FQS4901TF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 450mA Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 7.5nC @ 10V Max Input Capacitance: 210pF @ 25V Maximum Rds On at Id,Vgs: 4.2 Ohm @ 225mA, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039967-FQS4901TF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 450mA
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7.5nC @ 10V
Max Input Capacitance: 210pF @ 25V
Maximum Rds On at Id,Vgs: 4.2 Ohm @ 225mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 400V Dual N-Ch QFET

MOSFET 400V Dual N-Ch QFET

Buy Now Datasheet
MOSFET 2N-CH 400V 0.45A 8SOP - 598-FQS4901TF - Utmel Electronic Limited
Hong Kong, China
MOSFET 2N-CH 400V 0.45A 8SOP
598-FQS4901TF
MOSFET 2N-CH 400V 0.45A 8SOP 598-FQS4901TF
MOSFET 2N-CH 400V 0.45A 8SOP

MOSFET 2N-CH 400V 0.45A 8SOP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQS4901TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQS4901TF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQS4901TF
MOSFET 2N-CH 400V 450MA 8SOIC

MOSFET 2N-CH 400V 450MA 8SOIC

Supplier's Site
Mosfet Transistor, Dual N Channel, 450 Ma, 400 V, 3.2 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 31Y1558 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, Dual N Channel, 450 Ma, 400 V, 3.2 Ohm, 10 V, 4 V Rohs Compliant Onsemi
31Y1558
Mosfet Transistor, Dual N Channel, 450 Ma, 400 V, 3.2 Ohm, 10 V, 4 V Rohs Compliant Onsemi 31Y1558
MOSFET Transistor, Dual N Channel, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, Dual N Channel, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 400V, Soic, Full Reel; Transistor Polarity Onsemi - 34C0509 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 400V, Soic, Full Reel; Transistor Polarity Onsemi
34C0509
N Channel Mosfet, 400V, Soic, Full Reel; Transistor Polarity Onsemi 34C0509
N CHANNEL MOSFET, 400V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:450mA; On Resistance Rds(on):3.2ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

N CHANNEL MOSFET, 400V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:450mA; On Resistance Rds(on):3.2ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQS4901TF FQS4901TFTR-ND 1039967-FQS4901TF FQS4901TF 598-FQS4901TF FQS4901TF 31Y1558 34C0509
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQS4901TF MOSFET MOSFET 2N-CH 400V 0.45A 8SOP Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, Dual N Channel, 450 Ma, 400 V, 3.2 Ohm, 10 V, 4 V Rohs Compliant Onsemi N Channel Mosfet, 400V, Soic, Full Reel; Transistor Polarity Onsemi
Polarity N-Channel; 2 N-Channel (Dual) N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 400 volts 400 volts 400 volts
IDSS 450 milliamps 450 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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