onsemi Single FETs, MOSFETs FQPF9P25YDTU

Description
P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming)
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Description
P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FQPF9P25YDTU-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF9P25YDTU-ND
Single FETs, MOSFETs FQPF9P25YDTU-ND
P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming)

P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9P25YDTU - 001255-FQPF9P25YDTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9P25YDTU
001255-FQPF9P25YDTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9P25YDTU 001255-FQPF9P25YDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001255-FQPF9P25YDTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1180pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 620 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001255-FQPF9P25YDTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1180pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 620 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 800

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF9P25YDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF9P25YDTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF9P25YDTU
MOSFET P-CH 250V 6A TO220F-3

MOSFET P-CH 250V 6A TO220F-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET QF -250V 620MOHM TO220FYD

MOSFET QF -250V 620MOHM TO220FYD

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQPF9P25YDTU-ND 001255-FQPF9P25YDTU FQPF9P25YDTU FQPF9P25YDTU
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9P25YDTU Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type TO-220; TO-220-3 Full Pack, Formed Leads TO-220; SOT3; TO-220F-3 (Y-Forming) TO-220; TO-220-3 Full Pack, Formed Leads
V(BR)DSS 250 volts
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