onsemi Single FETs, MOSFETs FQPF9P25

Description
MOSFET P-CH 250V 6A TO220F-3
  • Single FETs, MOSFETs - FQPF9P25 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9P25 - 067475-FQPF9P25 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQPF9P25FS-ND - DigiKey
    DigiKey
  • Mosfet, P-Ch, -250V, -6A, To-220F-3; Transistor Polarity Onsemi - 46AC0864 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF9P25 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET P-CH 250V 6A TO220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQPF9P25 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQPF9P25
Single FETs, MOSFETs FQPF9P25
MOSFET P-CH 250V 6A TO220F-3

MOSFET P-CH 250V 6A TO220F-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9P25 - 067475-FQPF9P25 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9P25
067475-FQPF9P25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9P25 067475-FQPF9P25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067475-FQPF9P25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1180pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 620 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067475-FQPF9P25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1180pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 620 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF9P25FS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF9P25FS-ND
Single FETs, MOSFETs FQPF9P25FS-ND
P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F-3

P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQPF9P25
MOSFET FQPF9P25
MOSFET 250V P-Channel QFET

MOSFET 250V P-Channel QFET

Buy Now Datasheet
Mosfet, P-Ch, -250V, -6A, To-220F-3; Transistor Polarity Onsemi - 46AC0864 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -250V, -6A, To-220F-3; Transistor Polarity Onsemi
46AC0864
Mosfet, P-Ch, -250V, -6A, To-220F-3; Transistor Polarity Onsemi 46AC0864
MOSFET, P-CH, -250V, -6A, TO-220F-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -250V, -6A, TO-220F-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF9P25 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF9P25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF9P25
MOSFET P-CH 250V 6A TO220F-3

MOSFET P-CH 250V 6A TO220F-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQPF9P25 067475-FQPF9P25 FQPF9P25FS-ND FQPF9P25 46AC0864 FQPF9P25
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9P25 Single FETs, MOSFETs MOSFET Mosfet, P-Ch, -250V, -6A, To-220F-3; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 250 volts 250 volts
IDSS 6000 milliamps -6000 milliamps
PD 50000 milliwatts 50000 milliwatts
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