onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT FQPF9N90CT

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001254-FQPF9N90CT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT - 001254-FQPF9N90CT - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQPF9N90CT-ND - DigiKey
    DigiKey
  • Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi - 07R8619 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF9N90CT - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 900V 8A TO-220F - 598-FQPF9N90CT - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001254-FQPF9N90CT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT - 001254-FQPF9N90CT - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT
001254-FQPF9N90CT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT 001254-FQPF9N90CT
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001254-FQPF9N90CT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001254-FQPF9N90CT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 2730pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF9N90CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF9N90CT-ND
Single FETs, MOSFETs FQPF9N90CT-ND
N-Channel 900V 8A (Tc) 68W (Tc) Through Hole TO-220F-3

N-Channel 900V 8A (Tc) 68W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
900V MOSFET Transistor
2088-FQPF9N90CT
900V MOSFET Transistor 2088-FQPF9N90CT
MOSFETs 900V N-Chan Advance Q-FET C-Series Product overview: FQPF9N90CT from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF9N90CT can be used for catalog matching and distributor lookup.

MOSFETs 900V N-Chan Advance Q-FET C-Series Product overview: FQPF9N90CT from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF9N90CT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi - 07R8619 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi
07R8619
Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi 07R8619
MOSFET, N CHANNEL, 900V, 1.12OHM, 8A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 900V, 1.12OHM, 8A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQPF9N90CT
MOSFET FQPF9N90CT
MOSFET 900V N-Chan Advance Q-FET C-Series

MOSFET 900V N-Chan Advance Q-FET C-Series

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF9N90CT - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF9N90CT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF9N90CT
MOSFET N-CH 900V 8A TO220F

MOSFET N-CH 900V 8A TO220F

Supplier's Site
MOSFET N-CH 900V 8A TO-220F - 598-FQPF9N90CT - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 900V 8A TO-220F
598-FQPF9N90CT
MOSFET N-CH 900V 8A TO-220F 598-FQPF9N90CT
MOSFET N-CH 900V 8A TO-220F

MOSFET N-CH 900V 8A TO-220F

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001254-FQPF9N90CT FQPF9N90CT-ND 2088-FQPF9N90CT 07R8619 FQPF9N90CT FQPF9N90CT 598-FQPF9N90CT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT Single FETs, MOSFETs 900V MOSFET Transistor Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 900V 8A TO-220F
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 900 volts 900 volts
PD 68000 milliwatts 68 milliwatts 68000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack Tube TO-3; TO-220 58 nC @ 10 V
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