onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT FQPF9N90CT

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001254-FQPF9N90CT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT - 001254-FQPF9N90CT - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQPF9N90CT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF9N90CT - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi - 07R8619 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET N-CH 900V 8A TO-220F - 598-FQPF9N90CT - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001254-FQPF9N90CT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT - 001254-FQPF9N90CT - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT
001254-FQPF9N90CT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT 001254-FQPF9N90CT
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001254-FQPF9N90CT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001254-FQPF9N90CT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 2730pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF9N90CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF9N90CT-ND
Single FETs, MOSFETs FQPF9N90CT-ND
N-Channel 900V 8A (Tc) 68W (Tc) Through Hole TO-220F-3

N-Channel 900V 8A (Tc) 68W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF9N90CT - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF9N90CT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF9N90CT
MOSFET N-CH 900V 8A TO220F

MOSFET N-CH 900V 8A TO220F

Supplier's Site
Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi - 07R8619 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi
07R8619
Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi 07R8619
MOSFET, N CHANNEL, 900V, 1.12OHM, 8A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 900V, 1.12OHM, 8A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQPF9N90CT
MOSFET FQPF9N90CT
MOSFET 900V N-Chan Advance Q-FET C-Series

MOSFET 900V N-Chan Advance Q-FET C-Series

Buy Now Datasheet
MOSFET N-CH 900V 8A TO-220F - 598-FQPF9N90CT - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 900V 8A TO-220F
598-FQPF9N90CT
MOSFET N-CH 900V 8A TO-220F 598-FQPF9N90CT
MOSFET N-CH 900V 8A TO-220F

MOSFET N-CH 900V 8A TO-220F

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001254-FQPF9N90CT FQPF9N90CT-ND FQPF9N90CT 07R8619 FQPF9N90CT 598-FQPF9N90CT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N90CT Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 900V, 1.12Ohm, 8A, To-220F-3; Channel Type Onsemi MOSFET MOSFET N-CH 900V 8A TO-220F
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 900 volts 900 volts
PD 68000 milliwatts 68000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack 58 nC @ 10 V TO-3; TO-220
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