onsemi FETs - Single - FQPF9N50 FQPF9N50

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175500-FQPF9N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 5.3A Rds On (Maximum) at Id, Vgs: 730mOhm at 2.65A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1450pF at 25V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175500-FQPF9N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 5.3A Rds On (Maximum) at Id, Vgs: 730mOhm at 2.65A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1450pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FQPF9N50 - 1175500-FQPF9N50 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQPF9N50
1175500-FQPF9N50
FETs - Single - FQPF9N50 1175500-FQPF9N50
Manufacturer: ON Semiconductor Win Source Part Number: 1175500-FQPF9N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 5.3A Rds On (Maximum) at Id, Vgs: 730mOhm at 2.65A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1450pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175500-FQPF9N50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 50W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 5.3A
Rds On (Maximum) at Id, Vgs: 730mOhm at 2.65A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1450pF at 25V

Buy Now
Single FETs, MOSFETs - FQPF9N50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF9N50-ND
Single FETs, MOSFETs FQPF9N50-ND
N-Channel 500V 5.3A (Tc) 50W (Tc) Through Hole TO-220F-3

N-Channel 500V 5.3A (Tc) 50W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF9N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF9N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF9N50
MOSFET N-CH 500V 5.3A TO220F

MOSFET N-CH 500V 5.3A TO220F

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1175500-FQPF9N50 FQPF9N50-ND FQPF9N50
Product Name FETs - Single - FQPF9N50 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 50000 milliwatts
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