onsemi Single FETs, MOSFETs FQPF8N90C

N-Channel 900V 6.3A (Tc) 60W (Tc) Through Hole TO-220F-3

MOSFET N-CH 900V 6.3A TO220F

POWER FIELD-EFFECT TRANSISTOR, 6

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067472-FQPF8N90C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 6.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.9 Ohm @ 3.15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

N-Channel MOSFET, 900V, 6.3A, 1.9 Ohm, TO-220F Product overview: FQPF8N90C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 6.3A, 1.9 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6.3A, 1.9 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF8N90C can be used for catalog matching and distributor lookup.