MOSFET N-CH 800V 8A TO220F
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001251-FQPF8N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 59W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2050pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.55 Ohm @ 4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET N-CH 800V 8A TO220F
MOSFET 800V N-Ch Q-FET advance C-Series
| ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQPF8N80C | 001251-FQPF8N80C | FQPF8N80C | FQPF8N80C |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF8N80C | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 800 volts | 800 volts | ||
| IDSS | 8000 milliamps |
