Manufacturer: ON Semiconductor
Win Source Part Number: 1175496-FQPF8N60C
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: FQPF8N60
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 48W
Alternative Parts (Cross-Reference): PJF7NA60_T0_00001; TSM7ND60CI C0G; R6006ANX;
Introduction Date: May 15, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 7.5A
Rds On (Maximum) at Id, Vgs: 1.2Ohm at 3.75A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1255pF at 25V
N-Channel 600V 7.5A (Tc) 48W (Tc) Through Hole TO-220F-3
MOSFET 600V N-Ch Q-FET advance C-Series
MOSFET N-CH 600V 7.5A TO220F
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1175496-FQPF8N60C | FQPF8N60C-ND | FQPF8N60C | FQPF8N60C |
| Product Name | Electronic Surplus - FQPF8N60C | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | |||
| PD | 48000 milliwatts |
