onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N65CYDTU FQPF7N65CYDTU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001248-FQPF7N65CYDTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1245pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 800

650V 7A N-Channel Power MOSFET, TO-220F, 1.4 Ohm Product overview: FQPF7N65CYDTU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 7A, 1.4 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7A, 1.4 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF7N65CYDTU can be used for catalog matching and distributor lookup.

N-Channel 650V 7A (Tc) 52W (Tc) Through Hole TO-220F-3 (Y-Forming)