onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N65C FQPF7N65C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 092770-FQPF7N65C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1245pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N65C - 092770-FQPF7N65C - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQPF7N65C - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 488-FQPF7N65C-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF7N65C - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 650V, 7A, To-220F-3; Channel Type Onsemi - 31Y1540 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 092770-FQPF7N65C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1245pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N65C - 092770-FQPF7N65C - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N65C
092770-FQPF7N65C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N65C 092770-FQPF7N65C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 092770-FQPF7N65C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1245pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 092770-FQPF7N65C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1245pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF7N65C - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQPF7N65C
Single FETs, MOSFETs FQPF7N65C
MOSFET N-CH 650V 7A TO220F

MOSFET N-CH 650V 7A TO220F

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 650V MOSFET Transistor
2088-FQPF7N65C
N-Channel 650V MOSFET Transistor 2088-FQPF7N65C
MOSFETs 650V N-Channel Adv Q-FET C-Series Product overview: FQPF7N65C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF7N65C can be used for catalog matching and distributor lookup.

MOSFETs 650V N-Channel Adv Q-FET C-Series Product overview: FQPF7N65C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF7N65C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 488-FQPF7N65C-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FQPF7N65C-ND
Single FETs, MOSFETs 488-FQPF7N65C-ND
N-Channel 650V 7A (Tc) 52W (Tc) Through Hole TO-220F-3

N-Channel 650V 7A (Tc) 52W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF7N65C - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF7N65C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF7N65C
MOSFET N-CH 650V 7A TO220F

MOSFET N-CH 650V 7A TO220F

Supplier's Site
Mosfet, N-Ch, 650V, 7A, To-220F-3; Channel Type Onsemi - 31Y1540 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 7A, To-220F-3; Channel Type Onsemi
31Y1540
Mosfet, N-Ch, 650V, 7A, To-220F-3; Channel Type Onsemi 31Y1540
MOSFET, N-CH, 650V, 7A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 650V, 7A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQPF7N65C
MOSFET FQPF7N65C
MOSFET 650V N-Channel Adv Q-FET C-Series

MOSFET 650V N-Channel Adv Q-FET C-Series

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 092770-FQPF7N65C FQPF7N65C 2088-FQPF7N65C 488-FQPF7N65C-ND FQPF7N65C 31Y1540 FQPF7N65C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N65C Single FETs, MOSFETs N-Channel 650V MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 650V, 7A, To-220F-3; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 650 volts 650 volts
PD 52000 milliwatts 52000 milliwatts 52 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220F-3 (Y-Forming) TO-220; TO-220-3 Full Pack Tube TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3; TO-220
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