onsemi Single FETs, MOSFETs FQPF7N60

Description
N-Channel 600V 4.3A (Tc) 48W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet
Description
N-Channel 600V 4.3A (Tc) 48W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQPF7N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF7N60-ND
Single FETs, MOSFETs FQPF7N60-ND
N-Channel 600V 4.3A (Tc) 48W (Tc) Through Hole TO-220F-3

N-Channel 600V 4.3A (Tc) 48W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N60 - 067471-FQPF7N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N60
067471-FQPF7N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N60 067471-FQPF7N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067471-FQPF7N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1430pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067471-FQPF7N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1430pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF7N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF7N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF7N60
MOSFET N-CH 600V 4.3A TO220F

MOSFET N-CH 600V 4.3A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQPF7N60
MOSFET FQPF7N60
MOSFET 600V N-Channel QFET

MOSFET 600V N-Channel QFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQPF7N60-ND 067471-FQPF7N60 FQPF7N60 FQPF7N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N60 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack
V(BR)DSS 600 volts
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