N-Channel 100V 35A (Tc) 62W (Tc) Through Hole TO-220F-3
MOSFET N-CH 100V 35A TO220F
MOSFETs 100V N-Channel QFET Product overview: FQPF70N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF70N10 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067470-FQPF70N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3300pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 23 mOhm @ 17.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET N-CH 100V 35A TO220F
MOSFET, N-CH, 100V, 35A, 175DEG C, 62W ROHS COMPLIANT: YES
MOSFET, 100V DRAIN-SOURCE BREAKDOWN VOLTAGE, 35A CONTINUOUS DRAIN CURRENT, 62W POWER DISSIPATION, N-CHANNEL POLARITY, 470NS RISE TIME, 160NS FALL TIME, TO-220 CASE STYLE, 3 PIN, -55/175C OPERATING TEMP, ROHS COMPLIANT, THROUGH HOLE MOUNTED. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQPF70N10-ND | FQPF70N10 | 2088-FQPF70N10 | 067470-FQPF70N10 | FQPF70N10 | FQPF70N10 | 54AH8768 | 66947787 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF70N10 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 35A, 175Deg C, 62W Rohs Compliant Onsemi | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | Tube | TO-220; SOT3; TO-220F | TO-220; TO-220-3 Full Pack | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 35000 milliamps |