onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF6N80T FQPF6N80T

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001246-FQPF6N80T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 51W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.95 Ohm @ 1.65A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

800V N-Channel Power MOSFET, 3.3A, 1.95 Ohm, TO-220F Product overview: FQPF6N80T from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 3.3A, 1.95 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 3.3A, 1.95 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF6N80T can be used for catalog matching and distributor lookup.

N-Channel 800V 3.3A (Tc) 51W (Tc) Through Hole TO-220F-3