Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067469-FQPF6N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 51W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1310pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 800V 5.5A (Tc) 51W (Tc) Through Hole TO-220F-3
MOSFET N-CH 800V 5.5A TO220F
POWER FIELD-EFFECT TRANSISTOR, 5
MOSFET 800V N-Ch Q-FET advance C-Series
MOSFET N-CH 800V 5.5A TO220F
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 067469-FQPF6N80C | FQPF6N80C-ND | FQPF6N80C | FQPF6N80C | FQPF6N80C |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF6N80C | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 800 volts | 800 volts | |||
| PD | 51000 milliwatts | 51000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
