onsemi Single FETs, MOSFETs FQPF65N06

Description
N-Channel 60V 40A (Tc) 56W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet
Description
N-Channel 60V 40A (Tc) 56W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQPF65N06FS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF65N06FS-ND
Single FETs, MOSFETs FQPF65N06FS-ND
N-Channel 60V 40A (Tc) 56W (Tc) Through Hole TO-220F-3

N-Channel 60V 40A (Tc) 56W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF65N06 - 1006694-FQPF65N06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF65N06
1006694-FQPF65N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF65N06 1006694-FQPF65N06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1006694-FQPF65N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 2410pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 16 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1006694-FQPF65N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 2410pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 16 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore
N-Channel 60V 40A MOSFET Transistor
278-FQPF65N06
N-Channel 60V 40A MOSFET Transistor 278-FQPF65N06
N-Channel Power MOSFET, 60V, 40A, 16mR, TO-220F Product overview: FQPF65N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF65N06 can be used for catalog matching and distributor lookup.

N-Channel Power MOSFET, 60V, 40A, 16mR, TO-220F Product overview: FQPF65N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF65N06 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF65N06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF65N06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF65N06
MOSFET N-CH 60V 40A TO220F

MOSFET N-CH 60V 40A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V N-Channel QFET

MOSFET 60V N-Channel QFET

Buy Now Datasheet
Transistor - 38469789 - Radwell International
Willingboro, NJ, United States
Transistor
38469789
Transistor 38469789
MOSFET TRANSISTOR, N CHANNEL, 40 A, 60 V, 16 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET TRANSISTOR, N CHANNEL, 40 A, 60 V, 16 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQPF65N06FS-ND 1006694-FQPF65N06 278-FQPF65N06 FQPF65N06 FQPF65N06 38469789
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF65N06 N-Channel 60V 40A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack
V(BR)DSS 60 volts
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