onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF630 FQPF630

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204313-FQPF630 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 400 mOhm @ 3.15A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204313-FQPF630 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 400 mOhm @ 3.15A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF630 - 204313-FQPF630 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF630
204313-FQPF630
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF630 204313-FQPF630
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204313-FQPF630 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 400 mOhm @ 3.15A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204313-FQPF630
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 400 mOhm @ 3.15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF630OS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF630OS-ND
Single FETs, MOSFETs FQPF630OS-ND
N-Channel 200V 6.3A (Tc) 38W (Tc) Through Hole TO-220F-3

N-Channel 200V 6.3A (Tc) 38W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF630 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF630
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF630
MOSFET N-CH 200V 6.3A TO220F

MOSFET N-CH 200V 6.3A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQPF630
MOSFET FQPF630
MOSFET 200V N-Channel QFET

MOSFET 200V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204313-FQPF630 FQPF630OS-ND FQPF630 FQPF630
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF630 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 38000 milliwatts
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