onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF630 FQPF630

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204313-FQPF630
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 400 mOhm @ 3.15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

N-Channel 200V 6.3A (Tc) 38W (Tc) Through Hole TO-220F-3

N-Channel MOSFET 200V 6.3A 400mR Through Hole Product overview: FQPF630 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 200V, 6.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 200V, 6.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF630 can be used for catalog matching and distributor lookup.