Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067467-FQPF5N90
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 51W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.3 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 900V 3A (Tc) 51W (Tc) Through Hole TO-220F-3
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 900V, 2.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220F. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 900V 3A TO220F
| Win Source Electronics | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 067467-FQPF5N90 | FQPF5N90-ND | 96490389 | FQPF5N90 | FQPF5N90 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF5N90 | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 900 volts | ||||
| PD | 51000 milliwatts |
