onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF5N90 FQPF5N90

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067467-FQPF5N90 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 51W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.3 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067467-FQPF5N90 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 51W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.3 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF5N90 - 067467-FQPF5N90 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF5N90
067467-FQPF5N90
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF5N90 067467-FQPF5N90
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067467-FQPF5N90 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 51W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.3 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067467-FQPF5N90
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 51W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.3 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF5N90-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF5N90-ND
Single FETs, MOSFETs FQPF5N90-ND
N-Channel 900V 3A (Tc) 51W (Tc) Through Hole TO-220F-3

N-Channel 900V 3A (Tc) 51W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF5N90 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF5N90
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF5N90
MOSFET N-CH 900V 3A TO220F

MOSFET N-CH 900V 3A TO220F

Supplier's Site
Transistor - 96490389 - Radwell International
Willingboro, NJ, United States
Transistor
96490389
Transistor 96490389
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 900V, 2.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220F. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 900V, 2.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220F. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQPF5N90
MOSFET FQPF5N90
MOSFET 900V N-Channel QFET

MOSFET 900V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067467-FQPF5N90 FQPF5N90-ND FQPF5N90 96490389 FQPF5N90
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF5N90 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 900 volts
PD 51000 milliwatts
Unlock Full Specs
to access all available technical data