onsemi Transistor FQPF55N10

Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, N-CHANNEL, 100 V, 24.2~34.2 A (CONTINUOUS), 60 W, TO-220F PACKAGE. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet
Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, N-CHANNEL, 100 V, 24.2~34.2 A (CONTINUOUS), 60 W, TO-220F PACKAGE. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 220701100 - Radwell International
Willingboro, NJ, United States
Transistor
220701100
Transistor 220701100
DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, N-CHANNEL, 100 V, 24.2~34.2 A (CONTINUOUS), 60 W, TO-220F PACKAGE. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, N-CHANNEL, 100 V, 24.2~34.2 A (CONTINUOUS), 60 W, TO-220F PACKAGE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF55N10 - 040353-FQPF55N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF55N10
040353-FQPF55N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF55N10 040353-FQPF55N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040353-FQPF55N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 34.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 26 mOhm @ 17.1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040353-FQPF55N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 34.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 2730pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 26 mOhm @ 17.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FQPF55N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF55N10-ND
Single FETs, MOSFETs FQPF55N10-ND
N-Channel 100V 34.2A (Tc) 60W (Tc) Through Hole TO-220F-3

N-Channel 100V 34.2A (Tc) 60W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF55N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF55N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF55N10
MOSFET N-CH 100V 34.2A TO220F

MOSFET N-CH 100V 34.2A TO220F

Supplier's Site

Technical Specifications

  Radwell International Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 220701100 040353-FQPF55N10 FQPF55N10-ND FQPF55N10
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF55N10 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 60000 milliwatts
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