onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N90C FQPF4N90C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016467-FQPF4N90C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 960pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.2 Ohm @ 2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N90C - 016467-FQPF4N90C - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQPF4N90C-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQPF4N90C - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF4N90C - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 900V, 4A, To-220F-3; Channel Type Onsemi - 31Y1538 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016467-FQPF4N90C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 960pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.2 Ohm @ 2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N90C - 016467-FQPF4N90C - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N90C
016467-FQPF4N90C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N90C 016467-FQPF4N90C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016467-FQPF4N90C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 960pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.2 Ohm @ 2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016467-FQPF4N90C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 47W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 960pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.2 Ohm @ 2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF4N90C-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF4N90C-ND
Single FETs, MOSFETs FQPF4N90C-ND
N-Channel 900V 4A (Tc) 47W (Tc) Through Hole TO-220F-3

N-Channel 900V 4A (Tc) 47W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Single FETs, MOSFETs - FQPF4N90C - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQPF4N90C
Single FETs, MOSFETs FQPF4N90C
MOSFET N-CH 900V 4A TO220F

MOSFET N-CH 900V 4A TO220F

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF4N90C - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF4N90C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF4N90C
MOSFET N-CH 900V 4A TO220F

MOSFET N-CH 900V 4A TO220F

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQPF4N90C
MOSFET FQPF4N90C
MOSFET 900V N-Ch Q-FET advance C-Series

MOSFET 900V N-Ch Q-FET advance C-Series

Buy Now Datasheet
Mosfet, N-Ch, 900V, 4A, To-220F-3; Channel Type Onsemi - 31Y1538 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 4A, To-220F-3; Channel Type Onsemi
31Y1538
Mosfet, N-Ch, 900V, 4A, To-220F-3; Channel Type Onsemi 31Y1538
MOSFET, N-CH, 900V, 4A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 900V, 4A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016467-FQPF4N90C FQPF4N90C-ND FQPF4N90C FQPF4N90C FQPF4N90C 31Y1538
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N90C Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 900V, 4A, To-220F-3; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 900 volts 900 volts
PD 47000 milliwatts 47000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data