onsemi Single FETs, MOSFETs FQPF4N25

Description
N-Channel 250V 2.8A (Tc) 32W (Tc) Through Hole TO-220F-3
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Description
N-Channel 250V 2.8A (Tc) 32W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

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Single FETs, MOSFETs - FQPF4N25-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF4N25-ND
Single FETs, MOSFETs FQPF4N25-ND
N-Channel 250V 2.8A (Tc) 32W (Tc) Through Hole TO-220F-3

N-Channel 250V 2.8A (Tc) 32W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N25 - 1175481-FQPF4N25 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N25
1175481-FQPF4N25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N25 1175481-FQPF4N25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1175481-FQPF4N25 Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Part Status: Obsolete(EOL) Family Name: FQPF4N25 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220F Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 200pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 32W (Tc) Rds On (Maximum) @ Id, Vgs: 1.75 Ohm @ 1.4A, 10V Alternative Parts (Cross-Reference): IRFI614GPBF; IRFI614G; RCX050N25; Introduction Date: May 17, 2000 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175481-FQPF4N25
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQPF4N25
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220F
Channel Type Type: N
Drain Source Voltage: 250V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 5.6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 200pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 32W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.75 Ohm @ 1.4A, 10V
Alternative Parts (Cross-Reference): IRFI614GPBF; IRFI614G; RCX050N25;
Introduction Date: May 17, 2000
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF4N25 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF4N25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF4N25
MOSFET N-CH 250V 2.8A TO220F

MOSFET N-CH 250V 2.8A TO220F

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQPF4N25-ND 1175481-FQPF4N25 FQPF4N25
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N25 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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