onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N80CYDTU FQPF3N80CYDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039926-FQPF3N80CYDT U Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 16.5nC @ 10V Max Input Capacitance: 705pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 50
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039926-FQPF3N80CYDT U Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 16.5nC @ 10V Max Input Capacitance: 705pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 50
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N80CYDTU - 1039926-FQPF3N80CYDTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N80CYDTU
1039926-FQPF3N80CYDTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N80CYDTU 1039926-FQPF3N80CYDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039926-FQPF3N80CYDT U Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 16.5nC @ 10V Max Input Capacitance: 705pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039926-FQPF3N80CYDTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 16.5nC @ 10V
Max Input Capacitance: 705pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - FQPF3N80CYDTU-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF3N80CYDTU-ND
Single FETs, MOSFETs FQPF3N80CYDTU-ND
N-Channel 800V 3A (Tc) 39W (Tc) Through Hole TO-220F-3 (Y-Forming)

N-Channel 800V 3A (Tc) 39W (Tc) Through Hole TO-220F-3 (Y-Forming)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF3N80CYDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF3N80CYDTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF3N80CYDTU
MOSFET N-CH 800V 3A TO220F-3

MOSFET N-CH 800V 3A TO220F-3

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1039926-FQPF3N80CYDTU FQPF3N80CYDTU-ND FQPF3N80CYDTU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N80CYDTU Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts
PD 39000 milliwatts
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