Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001245-FQPF3N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 16.5nC @ 10V
Max Input Capacitance: 705pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
N CHANNEL MOSFET, 800V, 3A, TO-220F, TRANSISTOR POLARITY N CHANNEL, DRAIN SOURCE VOLTAGE VDS 800V, CONTINUOUS DRAIN CURRENT ID 3A, ON RESISTANCE RDS(ON) 4OHM, TRANSISTOR MOUNTING THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS 10V, MSL -, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
N-Channel 800V 3A (Tc) 39W (Tc) Through Hole TO-220F-3
MOSFET N-CH 800V 3A TO220F
MOSFET 800V N-Ch Q-FET advance C-Series
N CHANNEL MOSFET, 800V, 3A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Radwell International | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001245-FQPF3N80C | 6715250 | 6715250P | 16125768 | FQPF3N80C-ND | FQPF3N80C | FQPF3N80C | 84H4758 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N80C | MOSFETs | MOSFETs | Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 800V, 3A, To-220F; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 800 volts | |||||||
| PD | 39000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | TO-220; SOT3; TO-220F | TO-220; To-220f | TO-220; TO-220 | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-3; TO-220 |
