onsemi Single FETs, MOSFETs FQPF3N60

Description
N-Channel 600V 2A (Tc) 34W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet
Description
N-Channel 600V 2A (Tc) 34W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FQPF3N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF3N60-ND
Single FETs, MOSFETs FQPF3N60-ND
N-Channel 600V 2A (Tc) 34W (Tc) Through Hole TO-220F-3

N-Channel 600V 2A (Tc) 34W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N60 - 067459-FQPF3N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N60
067459-FQPF3N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N60 067459-FQPF3N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067459-FQPF3N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 450pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067459-FQPF3N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 450pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF3N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF3N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF3N60
MOSFET N-CH 600V 2A TO220F

MOSFET N-CH 600V 2A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQPF3N60-ND 067459-FQPF3N60 FQPF3N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF3N60 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack
V(BR)DSS 600 volts
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