onsemi Single FETs, MOSFETs FQPF34N20L

Description
N-Channel 200V 17.5A (Tc) 55W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet
Description
N-Channel 200V 17.5A (Tc) 55W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQPF34N20L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF34N20L-ND
Single FETs, MOSFETs FQPF34N20L-ND
N-Channel 200V 17.5A (Tc) 55W (Tc) Through Hole TO-220F-3

N-Channel 200V 17.5A (Tc) 55W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF34N20L - 067458-FQPF34N20L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF34N20L
067458-FQPF34N20L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF34N20L 067458-FQPF34N20L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067458-FQPF34N20L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 17.5A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 72nC @ 5V Max Input Capacitance: 3900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 8.75A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067458-FQPF34N20L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 17.5A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 72nC @ 5V
Max Input Capacitance: 3900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 8.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF34N20L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF34N20L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF34N20L
MOSFET N-CH 200V 17.5A TO220F

MOSFET N-CH 200V 17.5A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQPF34N20L-ND 067458-FQPF34N20L FQPF34N20L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF34N20L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack
V(BR)DSS 200 volts
Unlock Full Specs
to access all available technical data

Similar Products

15W, 30-1215 MHz, GaN RF Input-Matched Transistor - QPD1000A - Qorvo
Specs
Transistor Technology / Material 15W, 30-1215 MHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
GaAs Fet Switches - KCB828 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
Discrete Semiconductor Products - 221702-AUIRFS4010-7TRL - Win Source Electronics
Specs
Package Type SOT3
View Details
5 suppliers