onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF30N06L FQPF30N06L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016464-FQPF30N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 22.5A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 5V Max Input Capacitance: 1040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 11.3A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016464-FQPF30N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 22.5A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 5V Max Input Capacitance: 1040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 11.3A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF30N06L - 016464-FQPF30N06L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF30N06L
016464-FQPF30N06L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF30N06L 016464-FQPF30N06L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016464-FQPF30N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 22.5A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 5V Max Input Capacitance: 1040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 11.3A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016464-FQPF30N06L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 22.5A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 1040pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 11.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF30N06L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF30N06L-ND
Single FETs, MOSFETs FQPF30N06L-ND
N-Channel 60V 22.5A (Tc) 38W (Tc) Through Hole TO-220F-3

N-Channel 60V 22.5A (Tc) 38W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Singapore, Singapore
N-Channel 60V 22.5A MOSFET Transistor
278-FQPF30N06L
N-Channel 60V 22.5A MOSFET Transistor 278-FQPF30N06L
60V N-Channel Logic Level Power MOSFET, 22.5A, 35mR, TO-220F Product overview: FQPF30N06L from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 22.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 22.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF30N06L can be used for catalog matching and distributor lookup.

60V N-Channel Logic Level Power MOSFET, 22.5A, 35mR, TO-220F Product overview: FQPF30N06L from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 22.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 22.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF30N06L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V N-Channel QFET Logic Level

MOSFET 60V N-Channel QFET Logic Level

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF30N06L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF30N06L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF30N06L
MOSFET N-CH 60V 22.5A TO220F

MOSFET N-CH 60V 22.5A TO220F

Supplier's Site
Single FETs, MOSFETs - FQPF30N06L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQPF30N06L
Single FETs, MOSFETs FQPF30N06L
MOSFET N-CH 60V 22.5A TO220F

MOSFET N-CH 60V 22.5A TO220F

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016464-FQPF30N06L FQPF30N06L-ND 278-FQPF30N06L FQPF30N06L FQPF30N06L FQPF30N06L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF30N06L Single FETs, MOSFETs N-Channel 60V 22.5A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 38000 milliwatts 38000 milliwatts 38000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1352E - 855029-2SA1352E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor - QPD2796 - Qorvo
Specs
Transistor Technology / Material GaN
Power Gain 23 dB
Operating Frequency 2500 to 2700 MHz
View Details
Single FETs, MOSFETs - AUIRFSL6535-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA
Transistor Grade / Operating Range Automotive
View Details
3 suppliers