onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF2N80YDTU FQPF2N80YDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039915-FQPF2N80YDTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.3 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039915-FQPF2N80YDTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.3 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF2N80YDTU - 1039915-FQPF2N80YDTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF2N80YDTU
1039915-FQPF2N80YDTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF2N80YDTU 1039915-FQPF2N80YDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039915-FQPF2N80YDTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.3 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039915-FQPF2N80YDTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.3 Ohm @ 750mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FQPF2N80YDTU-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF2N80YDTU-ND
Single FETs, MOSFETs FQPF2N80YDTU-ND
N-Channel 800V 1.5A (Tc) 35W (Tc) Through Hole TO-220F-3 (Y-Forming)

N-Channel 800V 1.5A (Tc) 35W (Tc) Through Hole TO-220F-3 (Y-Forming)

Buy Now Datasheet
Singapore, Singapore
800V 1.5A TO-220 MOSFET Transistor
278-FQPF2N80YDTU
800V 1.5A TO-220 MOSFET Transistor 278-FQPF2N80YDTU
800V 1.5A N-CH MOSFET, 6.3Ω Rds(on), TO-220 Product overview: FQPF2N80YDTU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 1.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 1.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF2N80YDTU can be used for catalog matching and distributor lookup.

800V 1.5A N-CH MOSFET, 6.3Ω Rds(on), TO-220 Product overview: FQPF2N80YDTU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 1.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 1.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF2N80YDTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET QF 800V 6.3OHM TO220F

MOSFET QF 800V 6.3OHM TO220F

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF2N80YDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF2N80YDTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF2N80YDTU
MOSFET N-CH 800V 1.5A TO220F-3

MOSFET N-CH 800V 1.5A TO220F-3

Supplier's Site
MOSFET N-CH 800V TO-220-3 - 598-FQPF2N80YDTU - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V TO-220-3
598-FQPF2N80YDTU
MOSFET N-CH 800V TO-220-3 598-FQPF2N80YDTU
MOSFET N-CH 800V TO-220-3

MOSFET N-CH 800V TO-220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039915-FQPF2N80YDTU FQPF2N80YDTU-ND 278-FQPF2N80YDTU FQPF2N80YDTU FQPF2N80YDTU 598-FQPF2N80YDTU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF2N80YDTU Single FETs, MOSFETs 800V 1.5A TO-220 MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 800V TO-220-3
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 35000 milliwatts 35000 milliwatts 35000 milliwatts
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