Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039915-FQPF2N80YDTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.3 Ohm @ 750mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Channel 800V 1.5A (Tc) 35W (Tc) Through Hole TO-220F-3 (Y-Forming)
MOSFET N-CH 800V TO-220-3
MOSFET N-CH 800V 1.5A TO220F-3
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1039915-FQPF2N80YDTU | FQPF2N80YDTU-ND | FQPF2N80YDTU | 598-FQPF2N80YDTU | FQPF2N80YDTU |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF2N80YDTU | Single FETs, MOSFETs | MOSFET | MOSFET N-CH 800V TO-220-3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 800 volts | 800 volts | |||
| PD | 35000 milliwatts | 35000 milliwatts |
