onsemi Single FETs, MOSFETs FQPF2N60C

N-Channel 600V 2A (Tc) 23W (Tc) Through Hole TO-220F-3

MOSFET N-CH 600V 2A TO220F

POWER FIELD-EFFECT TRANSISTOR, 2

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016462-FQPF2N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 23W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 235pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.7 Ohm @ 1A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Lighting, Motor Drive & Control, Audio
Quantity per package: 1k pcs

600V 2A N-Channel MOSFET, 4.7 Ohm Rds(on), TO-220F Product overview: FQPF2N60C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 2A, 4.7 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2A, 4.7 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF2N60C can be used for catalog matching and distributor lookup.