onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF22P10 FQPF22P10

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204309-FQPF22P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 125 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF22P10 - 204309-FQPF22P10 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQPF22P10-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQPF22P10 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 89107455 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF22P10 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, -100V, -13.2A, To-220F-3; Transistor Polarity Onsemi - 46AC0863 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Qf -100V 125Mohm To220F Rohs Compliant Onsemi - 38AH0342 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204309-FQPF22P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 125 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF22P10 - 204309-FQPF22P10 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF22P10
204309-FQPF22P10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF22P10 204309-FQPF22P10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204309-FQPF22P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 125 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204309-FQPF22P10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 125 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF22P10-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF22P10-ND
Single FETs, MOSFETs FQPF22P10-ND
P-Channel 100V 13.2A (Tc) 45W (Tc) Through Hole TO-220F-3

P-Channel 100V 13.2A (Tc) 45W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Single FETs, MOSFETs - FQPF22P10 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQPF22P10
Single FETs, MOSFETs FQPF22P10
MOSFET P-CH 100V 13.2A TO220F

MOSFET P-CH 100V 13.2A TO220F

Supplier's Site Datasheet
Transistor - 89107455 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
89107455
Transistor 89107455
POWER FIELD-EFFECT TRANSISTOR, 13.2A I(D), 100V, 0.125OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 13.2A I(D), 100V, 0.125OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF22P10 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF22P10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF22P10
MOSFET P-CH 100V 13.2A TO220F

MOSFET P-CH 100V 13.2A TO220F

Supplier's Site
Mosfet, P-Ch, -100V, -13.2A, To-220F-3; Transistor Polarity Onsemi - 46AC0863 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -100V, -13.2A, To-220F-3; Transistor Polarity Onsemi
46AC0863
Mosfet, P-Ch, -100V, -13.2A, To-220F-3; Transistor Polarity Onsemi 46AC0863
MOSFET, P-CH, -100V, -13.2A, TO-220F-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.2A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; RoHS Compliant: Yes

MOSFET, P-CH, -100V, -13.2A, TO-220F-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.2A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; RoHS Compliant: Yes

Supplier's Site Datasheet
Qf -100V 125Mohm To220F Rohs Compliant Onsemi - 38AH0342 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Qf -100V 125Mohm To220F Rohs Compliant Onsemi
38AH0342
Qf -100V 125Mohm To220F Rohs Compliant Onsemi 38AH0342
QF -100V 125MOHM TO220F ROHS COMPLIANT: YES

QF -100V 125MOHM TO220F ROHS COMPLIANT: YES

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQPF22P10
MOSFET FQPF22P10
MOSFET 100V P-Channel QFET

MOSFET 100V P-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Radwell International Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204309-FQPF22P10 FQPF22P10-ND FQPF22P10 89107455 FQPF22P10 46AC0863 38AH0342 FQPF22P10
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF22P10 Single FETs, MOSFETs Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -100V, -13.2A, To-220F-3; Transistor Polarity Onsemi Qf -100V 125Mohm To220F Rohs Compliant Onsemi MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 100 volts 100 volts
PD 45000 milliwatts 45000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3; TO-220 TO-3
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