onsemi Single FETs, MOSFETs FQPF20N06

Description
N-Channel 60V 15A (Tc) 30W (Tc) Through Hole TO-220F-3
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Description
N-Channel 60V 15A (Tc) 30W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

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Single FETs, MOSFETs - FQPF20N06-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF20N06-ND
Single FETs, MOSFETs FQPF20N06-ND
N-Channel 60V 15A (Tc) 30W (Tc) Through Hole TO-220F-3

N-Channel 60V 15A (Tc) 30W (Tc) Through Hole TO-220F-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF20N06 - 067454-FQPF20N06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF20N06
067454-FQPF20N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF20N06 067454-FQPF20N06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067454-FQPF20N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: FQPF20N06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15.7A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 55 mOhm @ 7.85A, 10V Alternative Parts (Cross-Reference): TSM340N06CI C0G; C67078-A5003-A4; Introduction Date: May 15, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067454-FQPF20N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: FQPF20N06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 15.7A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 630pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 7.85A, 10V
Alternative Parts (Cross-Reference): TSM340N06CI C0G; C67078-A5003-A4;
Introduction Date: May 15, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

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Sheung Wan, Hong Kong
MOSFET 60V N-Channel QFET

MOSFET 60V N-Channel QFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF20N06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF20N06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF20N06
MOSFET N-CH 60V 15A TO220F

MOSFET N-CH 60V 15A TO220F

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQPF20N06-ND 067454-FQPF20N06 FQPF20N06 FQPF20N06
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF20N06 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack
V(BR)DSS 60 volts
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