onsemi Single FETs, MOSFETs FQPF19N20

Description
N-Channel 200V 11.8A (Tc) 50W (Tc) Through Hole TO-220F-3
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Description
N-Channel 200V 11.8A (Tc) 50W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQPF19N20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF19N20-ND
Single FETs, MOSFETs FQPF19N20-ND
N-Channel 200V 11.8A (Tc) 50W (Tc) Through Hole TO-220F-3

N-Channel 200V 11.8A (Tc) 50W (Tc) Through Hole TO-220F-3

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FETs - Single - FQPF19N20 - 1175472-FQPF19N20 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQPF19N20
1175472-FQPF19N20
FETs - Single - FQPF19N20 1175472-FQPF19N20
Manufacturer: ON Semiconductor Win Source Part Number: 1175472-FQPF19N20 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 11.8A Rds On (Maximum) at Id, Vgs: 150mOhm at 5.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1600pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175472-FQPF19N20
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 50W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 11.8A
Rds On (Maximum) at Id, Vgs: 150mOhm at 5.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1600pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF19N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF19N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF19N20
MOSFET N-CH 200V 11.8A TO220F

MOSFET N-CH 200V 11.8A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 200V N-Channel QFET

MOSFET 200V N-Channel QFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQPF19N20-ND 1175472-FQPF19N20 FQPF19N20 FQPF19N20
Product Name Single FETs, MOSFETs FETs - Single - FQPF19N20 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3 TO-220; TO-220-3 Full Pack
V(BR)DSS 200 volts
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