onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF19N10L FQPF19N10L

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039908-FQPF19N10L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13.6A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 870pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 100V 13.6A TO220F Product overview: FQPF19N10L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF19N10L can be used for catalog matching and distributor lookup.