N-Channel 100V 13.6A (Tc) 38W (Tc) Through Hole TO-220F-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 132738-FQPF19N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 780pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 100 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
MOSFET N-CH 100V 13.6A TO220F
TRANSISTOR,MOSFET,N-
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQPF19N10-ND | 132738-FQPF19N10 | FQPF19N10 | 82C4237 | FQPF19N10 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF19N10 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor,mosfet,n-Channel,100V V(Br)Dss,13.6A I(D),to-220Ab(Fp) Rohs Compliant Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220F | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | |
| V(BR)DSS | 100 volts |
