onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF19N10 FQPF19N10

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 132738-FQPF19N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 100 mOhm @ 6.8A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF19N10 - 132738-FQPF19N10 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQPF19N10-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF19N10 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor,mosfet,n-Channel,100V V(Br)Dss,13.6A I(D),to-220Ab(Fp) Rohs Compliant Onsemi - 82C4237 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 132738-FQPF19N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 100 mOhm @ 6.8A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF19N10 - 132738-FQPF19N10 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF19N10
132738-FQPF19N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF19N10 132738-FQPF19N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 132738-FQPF19N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 100 mOhm @ 6.8A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 132738-FQPF19N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 780pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 100 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
100V 13.6A MOSFET Transistor
278-FQPF19N10
100V 13.6A MOSFET Transistor 278-FQPF19N10
MOSFET N-CH 100V 13.6A TO220F Product overview: FQPF19N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF19N10 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 13.6A TO220F Product overview: FQPF19N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF19N10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQPF19N10-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF19N10-ND
Single FETs, MOSFETs FQPF19N10-ND
N-Channel 100V 13.6A (Tc) 38W (Tc) Through Hole TO-220F-3

N-Channel 100V 13.6A (Tc) 38W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQPF19N10
MOSFET FQPF19N10
MOSFET 100V N-Channel QFET

MOSFET 100V N-Channel QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF19N10 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF19N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF19N10
MOSFET N-CH 100V 13.6A TO220F

MOSFET N-CH 100V 13.6A TO220F

Supplier's Site
Transistor,mosfet,n-Channel,100V V(Br)Dss,13.6A I(D),to-220Ab(Fp) Rohs Compliant Onsemi - 82C4237 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor,mosfet,n-Channel,100V V(Br)Dss,13.6A I(D),to-220Ab(Fp) Rohs Compliant Onsemi
82C4237
Transistor,mosfet,n-Channel,100V V(Br)Dss,13.6A I(D),to-220Ab(Fp) Rohs Compliant Onsemi 82C4237
TRANSISTOR,MOSFET,N- CHANNEL,100V V(BR)DSS,13.6A I(D),TO-220AB(FP) ROHS COMPLIANT: YES

TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,13.6A I(D),TO-220AB(FP) ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 132738-FQPF19N10 278-FQPF19N10 FQPF19N10-ND FQPF19N10 FQPF19N10 82C4237
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF19N10 100V 13.6A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor,mosfet,n-Channel,100V V(Br)Dss,13.6A I(D),to-220Ab(Fp) Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 38000 milliwatts 38 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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