onsemi Single FETs, MOSFETs FQPF17P10

Description
P-Channel 100V 10.5A (Tc) 41W (Tc) Through Hole TO-220F-3
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Description
P-Channel 100V 10.5A (Tc) 41W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FQPF17P10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF17P10-ND
Single FETs, MOSFETs FQPF17P10-ND
P-Channel 100V 10.5A (Tc) 41W (Tc) Through Hole TO-220F-3

P-Channel 100V 10.5A (Tc) 41W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF17P10 - 1039907-FQPF17P10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF17P10
1039907-FQPF17P10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF17P10 1039907-FQPF17P10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039907-FQPF17P10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 5.25A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039907-FQPF17P10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 41W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 5.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF17P10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF17P10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF17P10
MOSFET P-CH 100V 10.5A TO220F

MOSFET P-CH 100V 10.5A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQPF17P10-ND 1039907-FQPF17P10 FQPF17P10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF17P10 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack
V(BR)DSS 100 volts
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