onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF16N15 FQPF16N15

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039904-FQPF16N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 53W (Tc) Family Name: FQPF16N15 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 11.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 910pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 10V Alternative Parts (Cross-Reference): FDPF770N15A; Introduction Date: May 16, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 50
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039904-FQPF16N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 53W (Tc) Family Name: FQPF16N15 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 11.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 910pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 10V Alternative Parts (Cross-Reference): FDPF770N15A; Introduction Date: May 16, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

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Product
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF16N15 - 1039904-FQPF16N15 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF16N15
1039904-FQPF16N15
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF16N15 1039904-FQPF16N15
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039904-FQPF16N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 53W (Tc) Family Name: FQPF16N15 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 11.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 910pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 10V Alternative Parts (Cross-Reference): FDPF770N15A; Introduction Date: May 16, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039904-FQPF16N15
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 53W (Tc)
Family Name: FQPF16N15
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 11.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 910pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 10V
Alternative Parts (Cross-Reference): FDPF770N15A;
Introduction Date: May 16, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - FQPF16N15-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF16N15-ND
Single FETs, MOSFETs FQPF16N15-ND
N-Channel 150V 11.6A (Tc) 53W (Tc) Through Hole TO-220F-3

N-Channel 150V 11.6A (Tc) 53W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF16N15 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF16N15
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF16N15
MOSFET N-CH 150V 11.6A TO220F

MOSFET N-CH 150V 11.6A TO220F

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1039904-FQPF16N15 FQPF16N15-ND FQPF16N15
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF16N15 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts
PD 53000 milliwatts
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