onsemi FETs - Single - FQPF13N10 FQPF13N10

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175467-FQPF13N10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 30W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 8.7A Rds On (Maximum) at Id, Vgs: 180mOhm at 4.35A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 16nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175467-FQPF13N10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 30W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 8.7A Rds On (Maximum) at Id, Vgs: 180mOhm at 4.35A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 16nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FQPF13N10 - 1175467-FQPF13N10 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQPF13N10
1175467-FQPF13N10
FETs - Single - FQPF13N10 1175467-FQPF13N10
Manufacturer: ON Semiconductor Win Source Part Number: 1175467-FQPF13N10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 30W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 8.7A Rds On (Maximum) at Id, Vgs: 180mOhm at 4.35A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 16nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175467-FQPF13N10
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 30W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 8.7A
Rds On (Maximum) at Id, Vgs: 180mOhm at 4.35A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 16nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V

Buy Now
Singapore
100V 8.7A MOSFET Transistor
278-FQPF13N10
100V 8.7A MOSFET Transistor 278-FQPF13N10
MOSFET N-CH 100V 8.7A TO220F Product overview: FQPF13N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF13N10 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 8.7A TO220F Product overview: FQPF13N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF13N10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQPF13N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF13N10-ND
Single FETs, MOSFETs FQPF13N10-ND
N-Channel 100V 8.7A (Tc) 30W (Tc) Through Hole TO-220F-3

N-Channel 100V 8.7A (Tc) 30W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
MOSFET N-CH 100V 8.7A TO-220F - 598-FQPF13N10 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 8.7A TO-220F
598-FQPF13N10
MOSFET N-CH 100V 8.7A TO-220F 598-FQPF13N10
MOSFET N-CH 100V 8.7A TO-220F

MOSFET N-CH 100V 8.7A TO-220F

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF13N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF13N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF13N10
MOSFET N-CH 100V 8.7A TO220F

MOSFET N-CH 100V 8.7A TO220F

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1175467-FQPF13N10 278-FQPF13N10 FQPF13N10-ND 598-FQPF13N10 FQPF13N10
Product Name FETs - Single - FQPF13N10 100V 8.7A MOSFET Transistor Single FETs, MOSFETs MOSFET N-CH 100V 8.7A TO-220F Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 30000 milliwatts 30000 milliwatts 30000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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