onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF13N06L FQPF13N06L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001238-FQPF13N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 24W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 6.4nC @ 5V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001238-FQPF13N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 24W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 6.4nC @ 5V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF13N06L - 001238-FQPF13N06L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF13N06L
001238-FQPF13N06L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF13N06L 001238-FQPF13N06L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001238-FQPF13N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 24W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 6.4nC @ 5V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001238-FQPF13N06L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 24W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6.4nC @ 5V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQPF13N06L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF13N06L-ND
Single FETs, MOSFETs FQPF13N06L-ND
N-Channel 60V 10A (Tc) 24W (Tc) Through Hole TO-220F-3

N-Channel 60V 10A (Tc) 24W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Singapore, Singapore
N-Channel 60V MOSFET Transistor
2088-FQPF13N06L
N-Channel 60V MOSFET Transistor 2088-FQPF13N06L
MOSFETs 60V N-Channel QFET Logic Level Product overview: FQPF13N06L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF13N06L can be used for catalog matching and distributor lookup.

MOSFETs 60V N-Channel QFET Logic Level Product overview: FQPF13N06L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQPF13N06L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N Ch, 60V, 10A, To-220F-3; Channel Type Onsemi - 31Y1536 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 60V, 10A, To-220F-3; Channel Type Onsemi
31Y1536
Mosfet, N Ch, 60V, 10A, To-220F-3; Channel Type Onsemi 31Y1536
MOSFET, N CH, 60V, 10A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 60V, 10A, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF13N06L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF13N06L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF13N06L
MOSFET N-CH 60V 10A TO220F

MOSFET N-CH 60V 10A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V N-Channel QFET Logic Level

MOSFET 60V N-Channel QFET Logic Level

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001238-FQPF13N06L FQPF13N06L-ND 2088-FQPF13N06L 31Y1536 FQPF13N06L FQPF13N06L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF13N06L Single FETs, MOSFETs N-Channel 60V MOSFET Transistor Mosfet, N Ch, 60V, 10A, To-220F-3; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 24000 milliwatts 24 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack Tube TO-3; TO-220 TO-220; TO-220-3 Full Pack
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