Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 091815-FQPF12N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 51W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 2290pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
N-Channel 600V 12A (Tc) 51W (Tc) Through Hole TO-220F-3
600V 12A N-Channel Power MOSFET, 650mR, TO-220F Product overview: FQPF12N60C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF12N60C can be used for catalog matching and distributor lookup.
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 600V, 0.65OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
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| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 091815-FQPF12N60C | FQPF12N60C-ND | 278-FQPF12N60C | 34030140 | FQPF12N60C | FQPF12N60C | FQPF12N60C |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF12N60C | Single FETs, MOSFETs | N-Channel 600V 12A MOSFET Transistor | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 51000 milliwatts | 51000 milliwatts | 51000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
