onsemi Single FETs, MOSFETs FQPF12N60C

Description
N-Channel 600V 12A (Tc) 51W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet
Description
N-Channel 600V 12A (Tc) 51W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQPF12N60C-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF12N60C-ND
Single FETs, MOSFETs FQPF12N60C-ND
N-Channel 600V 12A (Tc) 51W (Tc) Through Hole TO-220F-3

N-Channel 600V 12A (Tc) 51W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Singapore
N-Channel 600V 12A MOSFET Transistor
278-FQPF12N60C
N-Channel 600V 12A MOSFET Transistor 278-FQPF12N60C
600V 12A N-Channel Power MOSFET, 650mR, TO-220F Product overview: FQPF12N60C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF12N60C can be used for catalog matching and distributor lookup.

600V 12A N-Channel Power MOSFET, 650mR, TO-220F Product overview: FQPF12N60C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF12N60C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF12N60C - 091815-FQPF12N60C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF12N60C
091815-FQPF12N60C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF12N60C 091815-FQPF12N60C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 091815-FQPF12N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 51W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 2290pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 091815-FQPF12N60C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 51W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 2290pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FQPF12N60C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQPF12N60C
Single FETs, MOSFETs FQPF12N60C
MOSFET N-CH 600V 12A TO220F

MOSFET N-CH 600V 12A TO220F

Supplier's Site
Transistor - 34030140 - Radwell International
Willingboro, NJ, United States
Transistor
34030140
Transistor 34030140
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 600V, 0.65OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 600V, 0.65OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V N-Ch Q-FET advance C-Series

MOSFET 600V N-Ch Q-FET advance C-Series

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF12N60C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF12N60C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF12N60C
MOSFET N-CH 600V 12A TO220F

MOSFET N-CH 600V 12A TO220F

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQPF12N60C-ND 278-FQPF12N60C 091815-FQPF12N60C FQPF12N60C 34030140 FQPF12N60C FQPF12N60C
Product Name Single FETs, MOSFETs N-Channel 600V 12A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF12N60C Single FETs, MOSFETs Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack
PD 51000 milliwatts 51000 milliwatts 51000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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